收藏本站
Ordering number : ENA1852A
MCH6431
N-Channel Power MOSFET
30V, 5A, 55m Ω , Single MCPH6
Features
http://onsemi.com
?
?
?
?
ON-resistance RDS(on)1=42m Ω (typ.)
4V drive
Halogen free compliance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±20
5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (1200mm 2 × 0.8mm)
20
1.5
150
--55 to +150
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-009
Product & Package Information
? Package : MCPH6
? JEITA, JEDEC : SC-88, SC-70-6, SOT-363
? Minimum Packing Quantity : 3,000 pcs./reel
6
2.0
5
4
0.15
MCH6431-TL-H
Packing Type : TL
Marking
0 to 0.02
ZF
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Drain
1
2
3
2 : Drain
3 : Gate
4 : Source
1, 2, 5, 6
5 : Drain
6 : Drain
3
6
5
4
MCPH6
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/N1010PE TKIM TC-00002505 No. A1852-1/7
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MCH6436-TL-E MOSFET N-CH 30V 6A MCPH6
MCH6437-TL-E MOSFET N-CH 20V 7A MCPH6
MCH6444-TL-H MOSFET N-CH 35V 2.5A MCPH6
MCH6445-TL-E MOSFET N-CH 60V 4A MCPH6
MCH6448-TL-H MOSFET N-CH 20V 8A MCPH6
MCH6602-TL-E MOSFET N-CH DUAL 30V 350MA MCPH6
MCH6604-TL-E MOSFET N-CH DUAL 50V 250MA MCPH6
MCH6613-TL-E MOSFET N/P-CH 30V 350MA MCPH6
相关代理商/技术参数
MCH6436 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6436_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6436-TL-E 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH6437 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6437_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6437-P-TL-E 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH6437-TL-E 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH6438 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications